unit: mm features high current gain low c ollect or-e m itt er saturation voltage absolute maxim um ratings t a = 25 paramet er sym bol rating unit collector-ba se voltage v cbo -30 v collector-emit ter voltage v ceo -30 v em itt er-b ase voltage v ebo -6 v collector current i c -100 m a pow er dissi pation p d 250 m w thermal resist ance from junct ion to am bient r ja 500 /w oper ating and storage and tem pera ture rang e t j , t stg -55 to +150 21 34 tr1 tr2 1 sales@twtysemi.com 1 of 3 http://www.twtysemi.com s m d ty p e d i o d e s bcv 62 smd type transistors smd type transistors smd type transistors product specification 4008-318-123
s m d ty p e m o s f e t el ectrical characteristics t a = 2 5 parameter sym bol test c onditions min typ ma x unit collector-base breakdow n voltage v (br)cbo i c = -10 a , i e = 0 -30 v collector-em itt er breakdow n voltage v (br)ceo i c = -10 m a, i b = 0 -30 v em itt er- base b reakdow n voltage v (br)ebo i c = -10 a , i c = 0 -6 v collector cutof f c urr ent i cbo v cb =-30 v, i e =0 -15 na em itt er cutoff c urr ent i ebo v eb =-5v, i c =0 -100 na v ce =-5v, i c = -100a 100 v ce =-5v, i c =-2ma 100 800 i c = -10 m a; i b = -0.5 m a -0.3 v i c = -100 m a; i b = -5 m a -0.65 v i c = -10 m a; i b = -0.5 m a -0.7 v i c = -100 m a; i b = -5 m a -0.85 v collector capacit ance c c i e = i e = 0; v cb = -10 v; f = 1 mhz 4.5 pf transition frequen cy f t i c = -10 m a; v ce = -5 v; f = 100 m hz 100 mh z noise figure f i c =-20 0 a; v ce =-5 v; r s =2k ; f = 1 khz; b = 200 hz 10 db v cb = 0; i e = 250 m a 1.5 v v cb = 0; i e 0.4 m v dc curre nt gain BCV62a 125 250 BCV62b 220 475 BCV62c 420 800 * pulse t est: puls e w idth 300s, duty cy cle 2.0%. h fe i c = -2 m a; v ce = -5 v transistor tr1 transistor tr2 base-em itt er forw ard v oltage v ebs h fe dc curre nt gain collect or- em itt er saturation voltage * v ce(sat) v be(sat) base-emit ter saturation voltage * mark ing typ e bcv61 bcv61a bcv61b bcv61c ma rking 3m p 3jp 3kp 3lp = 10a sales@twtysemi.com 2 of 3 http://www.twtysemi.com s m d ty p e d i o d e s bcv 62 smd type transistors smd type transistors smd type transistors product specification 4008-318-123
s m d ty p e d i o d e s fig.1 maximum collector-emitter voltage as a function of emitter resistance. (see fig.3). i c1 i e2 ------- - 1.3 = handbook, full pagewidth 0 - 30 - 10 - 20 10 - 1 1 - v ce1max (v) 10 r e ( w ) 10 2 i e2 = 1 ma 5 ma 10 ma 50 ma t y pical ch aracteristics bcv 62 sales@twtysemi.com 3 of 3 http://www.twtysemi.com smd type transistors smd type transistors smd type transistors product specification 4008-318-123
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